2012. 8. 20 1/1 semiconductor technical data PG05DBEL2 tvs diode for esd protection in portable electronics revision no : 0 protection in portable electronics applications. features h 30 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-5(lightning) 2a(tp=8/20 s) h bidirectional type pin configuration structure. h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects one i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) elp-2 b f f a i j dim millimeters a b c c d d e 2 1 2 1 e h h typ 0.36 typ 0.1 max 0.3 g j i g g 0.6 0.05 + _ 0.3 0.05 + _ 0.2 0.05 + _ 0.25 0.05 + _ 0.025 0.02 + _ 0.18 0.05 + _ 0.28 0.05 + _ 1. anode 2. cathcde electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 30 w junction temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? marking 6 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakedown voltage v br i t =1ma 5.8 - 7.8 v reverse leakage current i r v rwm =5v - - 5 a clamping voltage v c i pp =2a, tp=8/20 s - - 15 v junction capacitance c j v r =0v, f=1mhz - 5 9 pf
2012. 8. 20 2/2 PG05DBEL2 revision no : 0
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